AIXTRON 2400 SiC MOCVD For Sale

Model Year:	1997
Quantity:	1
Condition:	Excellent operational condition
Serial No:	Available upon request
Availability:	SOLD

Configuration:

Aixtron 2400 SiC MOCVD Reactor

Epitaxial growth system for silicon carbide

Orignially purchased in 1997 as system 2000 HT

Retrofitted in 2003 for SiC to accommodate  5 x 3" wafers

RF heated platen/chamber capable of up to 1700C

Full planetary rotation of platen and wafers

Currently configured for 2-silane; 2-propane and 3 dopant input lines. Space for 3 additional dopants

Johnson Matthey Hydrogen purifiers

Glove box for wafer load and unload

Full computer control  Aixtron supplied CACE reactor control system

Comments:

This reactor is installed and operational in a cleanroom. It is available for immediate sale from GCE.  Let our MOCVD expertise and experience go to work for you.  We will handle the transaction for you from start to finish.

If you are interested in considering purchase of this reactor for your lab or fab, we welcome your inquiry.