SPTS LPX PEGASUS DRIE system

Standalone single wafer configuration
Capable of handling substrates up to 6"
Reconfigurable for 4" - 8" processing
Anisotropic, high aspect ratio etching of silicon

Includes: 
Process chamber module
Single wafer load-lock
Control rack and associated pumps / chillers

Hardware Specs:

Chamber:
Temperature controlled
Base pressure: <1.1E-6 Torr (cold)
Leak-up rate:  <0.2E-3 Torr/min (cold)
Temperature control: +20°C to +80°C

Source: 
Inductively coupled, high density
Advanced current controlled ion attenuation
Magnetic plasma confinement
Temperature controlled
Hinged for fast maintenance
3* close coupled MFCs 
Temperature control: +20°C to +80°C
Digital Fast acting MFCs: SF6, C4F8, O2 (standard)
Matching speed: < 1 second
Source power: 13.56MHz 3kW

Vacuum: 
Digitally controlled Magnetically levitated Turbo pump
Pendulum valve with integrated controller for process chamber pressure control and shut off
Dry pump for turbo pump forline pumping
Pendulum Temp control: +20°C to + 80°C
Turbo Temp control: +20°C to + 80°C
Backing base pressure: <1.1E-3Torr
Backing pump speed: 10m3 / hour

Electrode: 
Direct cooled Electrostatically controlled clamping with He substrate back-side cooling
Electrode Chiller with device net control
Wafer substrates: 150mm (reconfigurable to 100mm to 200mm)
Temperature control: -20°C to + 90°C
DC bias function: 13.56MHz 500W PSU
SOI function: 380KHz 300W PSU

Gauging: 
Process chamber high vacuum gauge
Process chamber capacitance manometer (heated)
Chamber vacuum and atmospheric switch 
High vacuum gauge: 10 E-2 to 10 E-8mbar
Process gauge options: 100mT, 250mT, 1Torr
Control: PLC control system with distributed Device net I/O
Certification: CE marked in adherence to: CE, EN, SEMI, UL and CSA

Process Capability:
-Anisotropic Si etching capability using the licensed switched ‘Bosch’ process
-150mm wafer etch capability reconfigurable to 100 to 200mm (The system requires a size kit specific for each wafer size, unless carriers can be used)
-Smooth sidewall capability using close-coupled MFC’s can achieve sidewall roughness better than 60nm RMS
-SPTS patented Low frequency SOI technology
-SPTS patented parameter ramping
-SOI wafer etch rate
4um/min for (5um wide trench, 10-20um deep)
-Bulk Si wafer etch rates
4.5um/min for (2.5um wide trench, 20um deep)
7um/min for (80um wide trench, 300um deep)
-Aspect ratios up to 50:1
-Selectivity between masking and etch materials
150:1 PR mask
200:1 SiO2 mask
-Etch side wall angles 90±1 degrees
-Standard gases C4F8, SF6, O2, and Ar (100sccm max. for all)

Module kits:

Decoupled ASE ICP:
Heated lower chamber assembly
Process module facilities service panel
Helium substrate backside cooling
MAG Drive 2000 Turbo controller with LCD display
Process module Turbo pump
Lower Electrode RF enclosure
Anti Condensation Kit for low temperature process
Platen matching HF matching unit
Process module vacuum gauge kit
Process pressure measurement
PRO2 module AC panel
415V, 3 phase transformer
Magnetic plasma confinement chamber
HRM decoupled ICP plasma source assembly
SPTS Source Enhancer Technology
SPTS smooth sidewall process gas distribution
Source RF matching unit
150mm TD Electrostatic clamping with waferless clean capability

Process chamber:
Process module backing pump 
Foreline self regulated heater jacket
Chiller for Lower Electrode temperature control
Chiller for Antenna temperature control

Process chamber gasbox:
Mini on-board gasbox for up to 5 gas lines
Gasline assembly compatible with non-hazardous gasses

Process chamber electrical:
38U electronics cabinet
Source RF generator
Lower electrode HF RF generator
Lower electrode LF RF generator
10amp Electromagnet PSU Assembly

Platform kits:

LPX 1 Transport Module:
SPTS Pro software package
Fully automatic single wafer vacuum Loadlock
High quality vacuum components
Perspex lid
Cable kit
Ball room operator control station
Transport pumping package.